unisonic technologies co., ltd 2sc1384 npn silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r211-005.d npn silicon transistor ? description the utc 2sc1384 is power amplifier and driver. ? features * low v ce(sat) * 2~3w output in complementary pair with 2sa684 ? ordering information ordering number pin assignment lead free halogen-free package 1 2 3 packing 2sc1384l-x-ab3-r 2sc1384g-x-ab3-r sot-89 b c e tape reel 2sc1384l-x-t9n-b 2sc1384g-x-t9n-b to-92nl e c b tape box 2sc1384l-x-t9n-k 2sc1384g-x-t9n-k to-92nl e c b bulk 2sc1384l-x-t9n-r 2sc1384g-x-t9n-r to-92nl e c b tape reel
2sc1384 npn silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r211-005.d ? absolute maximum ratings (t a =25 , unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v peak collector current i cp 1.5 a collector current (dc) i c 1 a collector dissipation (t a =25 ) p c 1000 mw junction temperature t j 125 operating temperature t opr -20 ~ +85 storage temperature t stg -40 ~ +150 note : absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =10 a, i e =0 60 v collector-emitter breakdown voltage bv ceo i c =2ma, i b =0 50 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 5 v collector cut-off current i cbo v cb =20v, i e =0 0.1 a h fe1 v ce =10v, i c =500ma 85 160 340 dc current gain h fe2 v ce =5v, i c =1a 50 100 collector-emitter satu ration voltage v ce(sat) i c =0.5a, i b =50ma 0.2 0.4 v base-emitter satura tion voltage v be(sat) i c =0.5a, i b =50ma 0.85 1.2 v current gain bandwidth product f t v ce =10v, i b =50ma 200 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 11 20 pf ? classification of h fe rank q r s range 85-170 120-240 170-340
2sc1384 npn silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r211-005.d ? typical characteristics collector power dissipation, p c (w) collector current, i c (a) collector current, i c (a) collector to emitter saturation voltage, v ce(sat) (v)
2sc1384 npn silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r211-005.d ? typical characteristics(cont.) -1 -3 -10 -30 -100 emitter current, i e (ma) 0 20 60 100 140 160 200 transition frequency, f t (mhz) v cb =10v t a =25 40 80 120 180 1 3 10 30 100 collector to base voltage, v cb (v) 0 5 15 25 35 40 50 collector output capacitance, c ob (pf) i e =0 f=1mhz t a =25 10 20 30 45 transition frequency vs. emitter current collector output capacitance vs. collector to base voltage 100 base to emitter resistance, r be (k ) 0 40 60 80 100 120 20 0.1 0.3 131030 i c =10ma t a =25 v ce =10v 0 20 40 60 80 100 120 140 160 ambient temperature, t a ( ) 1 10 10 2 10 3 10 4 collector to emitter voltage vs. base to emitter resistance collector to emitter current vs. ambient temperature collector current, i c (a)
2sc1384 npn silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r211-005.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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